72 DPI Image
150 DPI Image
No 300 DPI Version
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| Title: |
Chemistry, materials, Nanoscale strains |
| Description: |
Confocal Raman microscopy image of stress in a silicon crystal caused by indentation with a 20 micrometer long wedge. The image does not show the silicon but rather the magnitude of stress in the crystal, with compressive stress around the wedge going up from the base line. Vampiric red fangs reveal tensile stress associated with cracking at the ends of the indentation.
Click image to retrieve animated fly-by of image in avi format.
*CSTL, stress test, nanoscale strain, crystal, Raman microsopy, silicon, tensile stress, comressive stress, measurement
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| Subjects (names): |
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| Topics/Categories: |
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| Type: |
Graphic/scientific data |
| Source: |
National Institute of Standards and Technology |
Credit Line as it should
appear in print: |
Stranick/NIST |
| AV Number: |
08CSTL015 |
| Date Created: |
2008 |
| Date Entered: |
11/25/2008 |
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