Skip Navigation
NIST Image Gallery [skip navigation] Contact NIST go to A-Z subject index go to NIST homepage Search NIST webspace NIST logo--go to NIST Homepage

NIST Image Gallery

Home | About | Browse | Search

Image Gallery : Image Details
thumbnail
 72 DPI Image 
 150 DPI Image 
 300 DPI Image 
Title: New Design for Transistors Powered by Single Electrons
Description: The colorized images show how tuning the voltage of the three gates controls very small amounts of electrical charge and regulates current flow in the new silicon transistor. In the first figure, the pattern of diagonal lines indicates the charge is correlated throughout the device, and current is flowing (at levels ranging from 0 Amps shown in red, to 1.4 nanoAmps shown in violet). The next three figures show what happens as the voltage applied to the center gate is reduced. In the last figure, the square pattern indicates the charge has separated in the device, and the large amount of white space indicates a related drop off in the current.

EEEL, NTT Corp.

See also http://www.nist.gov/pml/new-020206.cfm.
Subjects (names):
Topics/Categories: Nanotechnology--Electronics
Type: Graphic/scientific data
Source: National Institute of Standards and Technology
Credit Line as it should
appear in print:
Credit: NTT/NIST
AV Number: 06EEEL003
Date Created: February 2, 2006
Date Entered: 2/2/2006

Home | About | Browse | Search