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Title: Transmission electron diffraction pattern
Description: Transmission electron diffraction pattern from from a segment of an indium gallium nitride (InGaN) nanowire about 50 nanometers in diameter taken with an SEM using the new NIST technique clearly shows a unique pattern associated with crystal diffraction. Bottom: Same pattern but with an overlay showing the crystallographic indexing associated with the atomic structure of the material.

MML

See also http://www.nist.gov/mml/acmd/ebsd-012412.cfm.
Subjects (names):
Topics/Categories: Nanotechnology--Biology/Health
Type: Graphic/scientific data
Source: National Institute of Standards and Technology
Credit Line as it should
appear in print:
Credit: Geiss/NIST
AV Number: 12MML004
Date Created: 2012
Date Entered: 1/24/2012

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