72 DPI Image
150 DPI Image
300 DPI Image
|
| Title: |
Placing Single Nanowires: NIST Makes the Connection |
| Description: |
Scanning electron microscope image shows a single silicon nanowire positioned in an etched trench using NIST's nanowire manipulation technique. The trench helps keep the nanowire in position during the fabrication of the rest of the test structure, which measures metal/nanowire contact resistance. The scale bar is 20 micrometers long.
*EEEL
See also http://www.nist.gov/public_affairs/techbeat/tb2007_0426.htm#nanowire.
|
| Subjects (names): |
|
| Topics/Categories: |
Nanotechnology--Electronics
|
| Type: |
Graphic/scientific data |
| Source: |
National Institute of Standards and Technology |
Credit Line as it should
appear in print: |
Credit: NIST |
| AV Number: |
07EEEL003 |
| Date Created: |
April 26, 2007 |
| Date Entered: |
4/26/2007 |
