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Title: Placing Single Nanowires: NIST Makes the Connection
Description: Scanning electron microscope image shows a single silicon nanowire positioned in an etched trench using NIST's nanowire manipulation technique. The trench helps keep the nanowire in position during the fabrication of the rest of the test structure, which measures metal/nanowire contact resistance. The scale bar is 20 micrometers long.

*EEEL

See also http://www.nist.gov/pml/nanowire-042607.cfm.
Subjects (names):
Topics/Categories: Nanotechnology--Electronics
Type: Graphic/scientific data
Source: National Institute of Standards and Technology
Credit Line as it should
appear in print:
Credit: NIST
AV Number: 07EEEL003
Date Created: April 26, 2007
Date Entered: 4/26/2007

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