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Title: Electronics; Semiconductors; Strained Silicon Devices
Description: X-ray topographs of three different strata of a strained-silicon wafer show close correspondence in defects from the base silicon layer (top) through the final strained-silicon layer (bottom). Color has been added for contrast, one particular defect area is highlighted.

MSEL, X-ray tomography, semiconductor defects, lattice, monochromatic X-rays

See also http://www.nist.gov/mml/stress-070606.cfm.
Subjects (names):
Topics/Categories: Electronics--Semiconductors
Materials--Ceramics
Nanotechnology--Electronics
Nanotechnology--Materials
Type: Graphic/scientific data
Source: National Institute of Standards and Technology
Credit Line as it should
appear in print:
Courtesy National Institute of Standards and Technology
AV Number: 06MSEL018
Date Created: July 6, 2006
Date Entered: 7/6/2006

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